(2025)
High-pressure hydrogen annealing for resistivity reduction of ultrathin tungsten electrodes.
JOURNAL OF ALLOYS AND COMPOUNDS.
1010,
-
(2023)
Three-Dimensional Surface Treatment of MoS2 Using BCl3 Plasma-Derived Radicals.
ACS APPLIED MATERIALS & INTERFACES.
15,
39
(2023)
Direct growth and interface reactions of ferroelectric Hf0.5Zr0.5O2 films on MoS2.
APPLIED SURFACE SCIENCE.
629,
-
(2023)
Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors.
NANO LETTERS.
23,
7
(2023)
Electrical properties of HfO2 on Si1−xGex substrates pretreated using a Y precursor with and without subsequent oxidant pulsing.
ACS APPLIED ELECTRONIC MATERIALS.
5,
2
(2023)
Combined effects of the deposition temperature and metal electrodes on ferroelectric properties of atomic-layer-deposited Hf0.5Zr0.5O2 films.
JOURNAL OF PHYSICS D-APPLIED PHYSICS.
56,
6
(2023)
Solution printable multifunctional polymer-based composites for smart electromagnetic interference shielding with tunable frequency and on–off selectivities.
ADVANCED COMPOSITES AND HYBRID MATERIALS.
6,
1
(2022)
Sublayer thickness dependence of nanolaminated HfO2-Al2O3 films for ferroelectric phase stabilization.
APPLIED PHYSICS LETTERS.
120,
22
(2021)
Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O.
CERAMICS INTERNATIONAL.
47,
22
(2021)
3D-to-2D phase transformation through highly ordered 1D crystals from transition-mental oxides to dichalcogenides.
MATERIALS TODAY.
47,
(2021)
Comparative study of C-V-based extraction methods of interface state density for a low-temperature polysilicon thin film.
MATERIALS RESEARCH EXPRESS.
8,
8
(2021)
Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films.
ACS APPLIED MATERIALS & INTERFACES.
13,
30
(2021)
Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1-xGex (x=0-0.3).
JOURNAL OF MATERIALS CHEMISTRY C.
9,
5
(2021)
Area-Selective Atomic Layer Deposition of MoS2 using Simultaneous Deposition and Etching Characteristics of MoCl5.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.
15,
2
(2021)
Sulfidation characteristics of amorphous nonstoichiometric Mo-oxides for MoS2 synthesis.
APPLIED SURFACE SCIENCE.
535,
(2020)
Introduction of an Al Seed Layer for Facile Adsorption of MoCl5 during Atomic Layer Deposition of MoS2.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.
217,
15
(2020)
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems.
JOURNAL OF ALLOYS AND COMPOUNDS.
826,
-
(2020)
Intriguing morphological evolution during chemical vapor deposition of HfS2 using HfCl4 and S on sapphire substrate.
APPLIED SURFACE SCIENCE.
509,
-
(2019)
Electrical properties of the HfO2/Al2O3 dielectrics stacked using single- and dual-temperature atomic-layer deposition processes on In-0.53Ga0.47As.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY.
34,
10
(2019)
Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation.
JOURNAL OF ALLOYS AND COMPOUNDS.
788,
1
특허/프로그램
반도체 구조의 제조 방법 및 반도체 소자.
10-2018-0169733.
20200424.
대한민국
핀 구조를 갖는 반도체 소자 및 이의 제조 방법.
10-2018-0169742.
20200424.
대한민국
인버터 소자 및 이의 제조 방법(INVERTER DEVICE AND PRODUCING METHOD OF THE SAME).
10-1693663-0000.
20170102.
대한민국
전이금속 디칼코게나이드 박막의 형성 방법(METHOD OF MANUFACTURING A TRANSITION METAL DICHALCOGENIDE THIN LAYER).
10-1532883-0000.
20150624.
대한민국
반도체 소자 및 반도체 소자 제조 방법.
10-2014-0036699.
20150416.
대한민국
이중층 구조의 반도체 채널을 구비하는 박막트랜지스터 및 이의 제조방법(THIN FILM TRANSISTOR HAVING DOUBLE LAYERED SEMICONDUCTOR CHANNEL AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR).
10-1417932-0000.
20140703.
대한민국
결정질 산화막을 포함한 저항 메모리 소자 및 이의 제조 방법(RESISTIVE MEMORY DEVICE COMPRISING CRYSTALLINE OXIDATION FILM AND METHOD OF FABRICATING THE SAME).
10-1401221-0000.
20140522.
대한민국
저항 메모리 소자 및 이의 제조방법(RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE RESISTIVE RANDOM ACCESS MEMORY DEVICES).
10-1356958-0000.
20140120.
대한민국
산소 플라즈마 처리된 채널층을 포함한 박막 트랜지스터 및 이의 제조 방법.
10-2012-0073819.
20131227.
대한민국
학술회의논문
(2016)
Electrical and Chemical Properties of HfO2/Al2O3 on In0.53Ga0.47As Annealed at Different H2 Pressures.
Pacific Rim Symposium on Surfaces, Coatings & Interfaces.
미국
(2016)
Comparative Study of the Ni-Silicide Films formed on Si and Strained Si:P.
Pacific Rim Symposium on Surfaces, Coatings & Interfaces.
미국
(2016)
Electrical Properties of the Atomic-Layer-Deposited Al2O3 on GaSb pretreated with TMA and TDMAT.
Pacific Rim Symposium on Surfaces, Coatings & Interfaces.
미국
(2016)
Optimization of the ZnO Passivation Process on p-type In0.53Ga0.47As Using Atomic Layer Deposition.
Pacific Rim Symposium on Surfaces, Coatings & Interfaces.
미국
(2016)
Atomic Layer Deposition of Al2O3 films on Various Two-Dimensional Materials.
Pacific Rim Symposium on Surfaces, Coatings & Interfaces.
미국
(2016)
Effect of surface cleaning methods on the interface characteristics of an HfO2/Al2O3 gate stack on InP with different crystal orientations.
11th Korea-Japan Conference on Ferroelectrics.
대한민국
(2015)
Self-cleaning effect of half-cycle diethylzinc treatment on the electrical properties of HfO2/In0.53Ga0.47As.
EuroCVD20.
스위스
발전기금
