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Professors

  • Associate Professor Semiconductor materials & devices
  • YOON, JUNGHO 홈페이지 바로가기
    Lab Emerging Materials, Devices & System Lab
CV1

Research Interest

Next-Generation Semiconductor Processes, Materials, and Devices
Next-Generation Memory
Neuromorphic Computing
Artificial Neural Systems

Education

  • 2010 - 2015 : Ph.D. Department of Materials Science and Engineering, Seoul National University
  • 2006 - 2010 : BS. Department of Materials Science and Engineering, Seoul National University

Experience

  • 2024 - : Assistant Professor, Department of Advanced Materials Science and Engineering, Sungkyunkwan University
  • 2020 - 2024 : Senior Research Scientist, Electronic Materials Research Center, Korea Institute of Science and Technology (KIST)
  • 2018 - 2024 : Senior Researcher, Inorganic Materials Lab, Samsung Advanced Institute of Technology (SAIT)
  • 2018 - 2018 : Visiting Researcher, Center for Nanoscale Materials, Argonne National Laboratory
  • 2015 - 2018 : Postdoctoral Research Associate, Electrical and Computer Engineering, University of Massachusetts, Amherst

Journal Articles

  • (2025)  A unipolar-driven synaptic transistor for environment-adaptable vision system.  NATURE COMMUNICATIONS.  16, 
  • (2025)  Calibration of P-bit for Aligned Stochastic Outputs in Probabilistic Computing.  MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS.  317, 
  • (2025)  Cluster-type conductive path-based selector-less 1R memristor array for spiking neural networks.  NANO ENERGY.  140, 
  • (2025)  Memristive neuromorphic interfaces: integrating sensory modalities with artificial neural networks.  MATERIALS HORIZONS.  12,  11
  • (2025)  Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing.  ADVANCED SCIENCE. 
  • (2025)  Multielement Filament Memristor Enabling Multifunctional Neuromorphic Device.  ADVANCED FUNCTIONAL MATERIALS. 
  • (2024)  A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse.  MATERIALS HORIZONS.  11,  21
  • (2024)  A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse.  MATERIALS HORIZONS.  11,  21
  • (2024)  Leveraging volatile memristors in neuromorphic computing: from materials to system implementation.  MATERIALS HORIZONS.  11,  20
  • (2023)  Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.  NANO CONVERGENCE.  10,  00
  • (2023)  An Artificial Olfactory System Based on a Chemi-Memristive Device.  ADVANCED MATERIALS.  35,  35
  • (2023)  Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse.  ACS APPLIED ELECTRONIC MATERIALS.  5,  8
  • (2023)  Heterosynaptic Plasticity in a Vertical Two-Terminal Synaptic Device.  NANO LETTERS.  23,  14
  • (2023)  Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes.  ACS APPLIED MATERIALS & INTERFACES.  15,  4
  • (2022)  Low Energy and Analog Memristor Enabled by Regulation of Ru ion Motion for High Precision Neuromorphic Computing.  ADVANCED ELECTRONIC MATERIALS.  8,  10
  • (2022)  Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing.  ACS APPLIED MATERIALS & INTERFACES.  14,  39
  • (2022)  Multi-Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu-Cone Structure Embedded Conductive Bridge Random Access Memory.  ADVANCED ELECTRONIC MATERIALS.  8,  8
  • (2022)  Artificial Adaptive and Maladaptive Sensory Receptors Based on a Surface-Dominated Diffusive Memristor.  ADVANCED SCIENCE.  9,  4