[김선국 교수님_Nature Communications] Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 trans
- 신소재공학부
- 조회수2015
- 2022-02-07
□ Paper title : Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
□ Journal : Nature Communications
□ Author : Prof. Sunkook Kim
□ IF : 14.919
□ Abstract
Various large-area growth methods for two-dimensional transition metal dichalcogenides
have been developed recently for future electronic and photonic applications. However, they
have not yet been employed for synthesizing active pixel image sensors. Here, we report on
an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area
growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors
and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer
MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as
high as 119.16 AW−1. With the aid of computational modeling, we find that the main
mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by
the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2
active pixel image sensor array are successfully investigated using light stencil projection.
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